Exploring the potential of ultimate vertical nanowire transistor technology based on TCAD modeling.
Toulouse, France
il y a 4j

Description :

While artificial intelligence (AI) and machine learning techniques enjoy sustained interest across a broad range of application domains, current digital computing hardware is known to be inadequate to effectively implement AI, particularly in terms of energy efficiency.

New technological breakthroughs at the device level are needed to enable the next AI revolutions with new forms of AI adapted to these technologies.

Vertical gate-all-around nanowire field effect transistors, a disruptive technology where LAAS-CNRS is one of the world references, allows a truly 3D layout configuration to continue to scale gate length and benefit from scaling improvements to energy-efficiency

This internship is part of the European FVLLMONTI Project , which aim to explore high-performance and energy-efficient computing paradigms based on this vertical architecture.

This will give the student a very stimulating context of international research collaboration .

The intern will focus his work on the exploration of the novel non-conventional vertical transistor architecture based on technology-computer aided design (TCAD) in collaboration withour associates at Global TCAD Solutions in Austria. This includes :

  • Framework definition of the device and validation with experiments set of data
  • Understanding of the device physics based on TCAD work
  • Definition of an optimized device structures and implementation in the process scheme in link with the technological specialists.
  • The student will also investigate how such a device can be integrated in 3D logic cells that can be more compact and energy-efficient.

    Work environment : The intern will be in the Nano&Neuro Electronics lab (within the MPN team) that has international recognition in the development of functional nano-devices for nanoelectronics applications.

    She / He will be co-supervised by M3 team, which have a long lasting experience in modeling of nano-devices and nanostructures.

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